Beschreibung
IXGH 25N90A IGBT Transistor N-Kanal 900V 50A 200W TO247AD
- IGBT N-Kanal Transistor 600V 23A 100W TO220AB
- IBGT = Isulated Gate Bipolar Transistor = MOSIGBT
- VCES = Collector-to-Emitter Voltage = 900V
- IC 25°C = Continuous Collector Current = 50A
- IC 90°C = Continuous Collector Current = 25A
- ICM = Pulsed Collector Current 100A
- VCE sat = 3,5V
- VGE = Gate-to-Emitter Voltage +/-20V
- PD 25°C = Maximum Power Dissipation 200W
- TF = Current Fall Time = 1500ns
- Pinlayout siehe weitere Bilder
