Beschreibung
IGBT G20N60B30 N-Kanal 600V 40A TO247AD mit Diode
Isulated Gate Bipolar Transistor
Belegung: von Links nach Rechts = Gate – Colektor – Emitter ( siehe weitere Bilder )
IGBT N-Kanal Transistor 600V 40A 165W TO247AD
VCES = Collector-to-Emitter Voltage = 600V
IC 25°C = Continuous Collector Current = 40A
ICM = Pulsed Collector Current 160A
Gate to Emitter Voltage Continuous . VGES +/-20 V
Gate to Emitter Voltage Pulsed VGEM +/-30 V
Switching Safe Operating Area at TC = 150oC SSOA 30A at 600V
